Hot-carrier characterization of submicrometer MOS transistors : subthreshold degradation and channel-width effect /
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| Main Author: | |
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| Format: | Thesis Book |
| Language: | English |
| Published: |
1998.
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| LEADER | 00831cam a2200229 a 4500 | ||
|---|---|---|---|
| 001 | u437521 | ||
| 003 | SIRSI | ||
| 008 | 990402s1998 si v 00 1 eng m | ||
| 035 | |a ACG-9106 | ||
| 040 | |a UMM | ||
| 090 | |a TK7871.99 |b M44Qin | ||
| 100 | 1 | 0 | |a Qin, Wei Han. |
| 245 | 1 | 0 | |a Hot-carrier characterization of submicrometer MOS transistors : |b subthreshold degradation and channel-width effect / |c by Qin Wei Han. |
| 260 | |c 1998. | ||
| 300 | |a xvi, 118 leaves : |b ill. ; |c 30 cm. | ||
| 502 | |a Dissertation (M.Eng.) -- National University of Singapore, 1998. | ||
| 504 | |a Includes bibliographical references. | ||
| 650 | 0 | |a Metal oxide semiconductor field-effect transistors. | |
| 650 | 0 | |a Hot carriers. | |
| 948 | |a 02/04/1999 |b 08/04/1999 | ||
| 596 | |a 1 | ||
| 999 | |a TK7871.99 M44QIN |w LC |c 1 |i A508384216 |l STACKS |m P01UTAMA |r Y |s Y |t TESIS |u 12/4/1999 | ||