Degradation and annealing of electrically-stressed thin oxide in MOS devices /
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| Main Author: | |
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| Format: | Thesis Book |
| Language: | English |
| Published: |
1998.
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| LEADER | 00894cam a2200241 a 4500 | ||
|---|---|---|---|
| 001 | u438263 | ||
| 003 | SIRSI | ||
| 008 | 990420s1998 si v 00 1 eng m | ||
| 035 | |a ACH-0104 | ||
| 040 | |a UMM | ||
| 090 | |a TK7871.99 |b M44Ng | ||
| 100 | 1 | 0 | |a Ng, Wee Thong. |
| 245 | 1 | 0 | |a Degradation and annealing of electrically-stressed thin oxide in MOS devices / |c by Ng Wee Thong. |
| 260 | |c 1998. | ||
| 300 | |a xvi, 94 leaves : |b ill. ; |c 30 cm. | ||
| 500 | |a Spine title: Electrically-stressed thin oxide in MOS devices. | ||
| 502 | |a Dissertation (M.Eng.) -- National University of Singapore, 1998. | ||
| 504 | |a Includes bibliographical references. | ||
| 650 | 0 | |a Metal oxide semiconductors |x Deterioration | |
| 740 | 0 | 0 | |a Electrically-stressed thin oxide in MOS devices. |
| 948 | |a 20/04/1999 |b 24/05/1999 | ||
| 596 | |a 1 | ||
| 999 | |a TK7871.99 M44NG |w LC |c 1 |i A508386278 |l STACKS |m P01UTAMA |r Y |s Y |t TESIS |u 3/6/1999 | ||