Degradation and annealing of electrically-stressed thin oxide in MOS devices /

Degradation and annealing of electrically-stressed thin oxide in MOS devices /

محفوظ في:

التفاصيل البيبلوغرافية
المؤلف الرئيسي:	Ng, Wee Thong
التنسيق:	أطروحة كتاب
اللغة:	English
منشور في:	1998.
الموضوعات:	Metal oxide semiconductors > Deterioration
الوسوم:	إضافة وسم لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!

مواد مشابهة

Reliability investigation of MOS devices under high current impulse stressing /
بواسطة: Teh, Gim Leong
منشور في: (1998)

Electrical characterisation of MOS gate oxide /
بواسطة: Ooi, Joo Aik
منشور في: (1996)

New techniques for the characterization of hot-carrier degradation in MOS devices /
بواسطة: Leang, Sern Ee
منشور في: (1997)

Characterization of hot-carrier degradation in submicrometer MOS transistors /
بواسطة: Ang, Diing Shenp
منشور في: (1997)

A comparative study of MOS capacitors fabricated on single-crystal and polycrystalline silicon /
بواسطة: Tay, Tuang Mee
منشور في: (1990)

Tunnelling phenomena in rapid thermal annealed silicon : silicon oxide systems /
بواسطة: Poon, Fook Weng
منشور في: (1997)

Hot-carrier characterization of tungsten polycide gate and graded-junction MOS transistors /
بواسطة: Lou, Choon Leong
منشور في: (1997)

Hot-carrier characterization of submicrometer MOS transistors : subthreshold degradation and channel-width effect /
بواسطة: Qin, Wei Han
منشور في: (1998)

Modelling and simulation of hot-carrier degradation in submicrometre MOS transistors /
بواسطة: Seah, Boon Pian
منشور في: (1995)

Electrical characterization of N[2]O annealed gate oxide /
بواسطة: Dai, Feng
منشور في: (1997)

The lateral profiling of interface state and oxide charge densities in electrically stressed MOSFET's /
بواسطة: Hoon, Siew Kuok
منشور في: (1998)

A study of hot-carrier degradation in nitrided and conventional oxides /
بواسطة: Goo, Kah Heong
منشور في: (1998)

Hot-carrier effects in thin gate oxide MOSFET's /
بواسطة: See, Leng Kian
منشور في: (1998)

Electrical and structural characterisations of rapid thermal annealed silicon-silicon oxide systems /
بواسطة: Chan, Yee Ming
منشور في: (1997)

Effect of X-ray lithography on MOS device reliability /
بواسطة: Kim, Sun Jung
منشور في: (2001)

A correlation of oxide trap density and TDDB characteristics of very thin SiO2 films /
بواسطة: Perera, Merinnage Tamara Chandima
منشور في: (1995)

Development of empirical potential profile model for unusual energy separation of subbands in inidium-absorbed Si(111) inversion layer /
بواسطة: Nur Idayu binti Ayob
منشور في: (2015)

Electrical and structural characterisation of rapid thermal annealed RF sputtered silicon oxide films /
بواسطة: Han, King Kwang
منشور في: (1998)

Quarter-micron process simulation and LDD structure optimization /
بواسطة: Wang, Yu
منشور في: (1997)

Formation of ZrO2 gate dielectric on Ge substrate by thermal oxidation and post annealing for metal-oxide-semiconductor devices /
بواسطة: Lei, Zhen Ce
منشور في: (2019)

Evaluation of hot-carrier degradation in submicrometre MOSFETs by gate capacitance and charge pumping current measurements /
بواسطة: Tan, Suat Eng
منشور في: (1997)

Hot-carrier degradation study in MOSFET's by charge pumping, gated-diode and floating gate techniques /
بواسطة: Goh, Yong Han
منشور في: (1997)

Effect of rapid thermal annealing on rf sputtered silicon-silicon oxide systems /
بواسطة: Choo, Chong Kheng
منشور في: (1997)

Simulation of charge-trapping in nano-scale mosfets in the presence of random-dopants-induced variability /
بواسطة: Muhammad Faiz Bukhori
منشور في: (2011)

Extraction of submicron mosfet parameters /
بواسطة: Seah, Kah Suan
منشور في: (1997)

Design and construction of charge pumping technique for MOS transistor characterization /
بواسطة: Lee, Hock Guan
منشور في: (2004)

The influence of a layer of oxide on electromigration performance of Al/Cu/Si metal lines /
بواسطة: Koh, David Khar Ann
منشور في: (1995)

Characterization of pmosfet degradation in negative bias temperature instability test /
بواسطة: Soon, Foo Yew
منشور في: (2012)

Process integration issues of self-aligned titanium silicide technology (Ti-Salicide) in deep sub-micron CMOS devices fabrication /
بواسطة: Lim, Chong Wee
منشور في: (1998)

A study of hot carrier degradation in LDMOS transistor /
بواسطة: Atikah Razi
منشور في: (2013)

Design of a 2.45 GHz RF-CMOS power splitter circuit for ISM RFID readers /
بواسطة: Uddin, Md. Jasim
منشور في: (2010)

Modelling and Simulation of Si/SiGe Heterostructure Devices
بواسطة: Abd. Rasheid, Norulhuda
منشور في: (2002)

Correlation study between doping techniques towards diffusion rate and oxidation rate/ Habibah Zulkefle
بواسطة: Zulkefle, Habibah
منشور في: (2010)

Hot-carrier studies in submicrometer SOI and conventional MOSFETs /
بواسطة: Yip, Anselm
منشور في: (1998)

Two-phase clocked adiabatic static CMOS logic : analysis, application and LSI implementation /
بواسطة: Nazrul Anuar Nayan
منشور في: (2011)

Structural and optical properties of deposited zinc oxide on integrated pulsed electrochemical porous silicon / Nurul Hanida Abd Wahab
بواسطة: Abd Wahab, Nurul Hanida
منشور في: (2020)

Synthesis of reduced graphene oxide-silver nanohybrids: using monosaccharides as reducing agents at different time reaction / Faizatun Nabilah Nor Ismail
بواسطة: Nor Ismail, Faizatun Nabilah
منشور في: (2024)

Influence of rare earth (Nd,Er) doping on electrical and structural properties of low density Bi₁.₆Pbₒ.₄Sr₂Ca₂₋ₓREₓCu₃08 superconductors prepared via coprecipitation technique / Noor Syuhaida Ibrahim
بواسطة: Ibrahim, Noor Syuhaida
منشور في: (2016)

Carrier lifetime characterization techniques in SOI and bulk silicon /
بواسطة: Cheng, Zhiyuan
منشور في: (1999)

Negative bias temperature instability and permittivity dependent delay mitigation in High-K metal oxide compatible cmos dielectric /
بواسطة: Karim, Nissar Mohammad
منشور في: (2015)

Services hosted by the Perpustakaan Sultan Abdul Samad, Universiti Putra Malaysia with Cooperation MySyL Group