Gate oxide integrity study /

Gate oxide integrity study /

محفوظ في:

التفاصيل البيبلوغرافية
المؤلف الرئيسي:	Lee, Joshua Wai Khin
التنسيق:	أطروحة كتاب
اللغة:	English
منشور في:	1999
الوسوم:	إضافة وسم لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!

مواد مشابهة

Study on dual gate oxide integrity for system-on-a-chip technology /
بواسطة: Zhuang, Ziyun
منشور في: (2002)

Study of gate oxide degradation using photon emission spectroscopy /
بواسطة: Chen, Kok Kiong
منشور في: (2002)

A study of the quasi-breakdown mechanism in ultra-thin gate oxide /
بواسطة: Xu, Zhen
منشور في: (2000)

Fabrication and reliability study of ultrathin nitride/oxide gate stack and oxynitride /
بواسطة: Lin, Wenhe
منشور في: (2002)

The effect of nitrogen incorporation into gate oxide by nitrogen implantation /
بواسطة: Ko, Lian Hoon
منشور في: (1999)

New investigation in ultra-thin gate oxide degradation phenomena /
بواسطة: Guan, Hao
منشور في: (2001)

Application of NH4F chemistry for the pre-gate oxidation cleaning process /
بواسطة: Teo, Eric Yeow Hwee
منشور في: (2002)

Development of ultra-thin nitrogen-rich gate oxide process for deep submicron CMOS technology /
بواسطة: Lek, Chun Meng
منشور في: (2002)

A low voltage dual gate integrated CMOS mixer for bluetooth/Wi-Fi application /
بواسطة: Cui, Jiqing
منشور في: (2002)

Study of plasma induced charging damage at CMOS gate process /
بواسطة: Chong, Daniel Kien Seen
منشور في: (2002)

An accurate delay model for BiCMOS/CMOS logic gates /
بواسطة: Zhao, Bin
منشور في: (1999)

Analysis and optimisation of dual-gate IGBT for soft-switching application /
بواسطة: Yuan, Xiaolu
منشور في: (1999)

Electrical characterisation of MOS gate oxide /
بواسطة: Ooi, Joo Aik
منشور في: (1996)

Ultra-thin gate oxide reliability /
بواسطة: Ang, Chew Hoe
منشور في: (2000)

Neodymium oxide thin film gate oxide on silicon substrate /
بواسطة: Hetherin Karuppiah
منشور في: (2018)

Development of integrated zinc oxide nanorods coated glass substrate sensing device /
بواسطة: Haziezol Helmi Mohd Yusof
منشور في: (2020)

Gate oxide integrity (GOI) for C13 (0.13 [micro]m) silicon processing technology /
بواسطة: Yong, Yoong Hooi
منشور في: (2006)

Performance of advanced-process and multi-gated mosfets based on geometric and process design considerations /
بواسطة: Fazliyatul Azwa Md Rezali
منشور في: (2017)

Oxidation studies of hydrogenated amorphous silicon carbide films /
بواسطة: Lee, Liang Pao
منشور في: (2001)

Instrumentation development of an automated integrated test system (AITS) for the characterization of hot-carrier and oxide reliability /
بواسطة: Ng Tsu Hau
منشور في: (2000)

Hot-carrier effects in thin gate oxide MOSFET's /
بواسطة: See, Leng Kian
منشور في: (1998)

Samarium oxide and samarium oxynitride thin film gate oxides on silicon substrate /
بواسطة: Goh, Kian Heng
منشور في: (2017)

Variable oxide thickness optimization and reliability analysis of Gate-All-Around floating gate for flash memory cell
بواسطة: A. Hamid, Farah
منشور في: (2020)

Void formation in P+ Ti-Salicided Polysilicon gate electrode in deep sub-quarter-micron CMOS Technology /
بواسطة: Chua, Hwee Ngoh
منشور في: (2000)

Electrical characterization of N[2]O annealed gate oxide /
بواسطة: Dai, Feng
منشور في: (1997)

Defectivity improvement in advanced processes and its investigation to negative bias temperature instabilities in High-K/Metal-Gate Deep-Submicron CMOS /
بواسطة: Yasmin Abdul Wahab
منشور في: (2015)

Charge-based compact model of gate-all-around floating gate nanowire with variable oxide thickness for flash memory cell
بواسطة: Hamzah, Muhammad Afiq Nurudin
منشور في: (2018)

A study of CO/oxide/COFE tunneling junctions /
بواسطة: Lim, Zao Lin
منشور في: (2001)

Characterization and model development of complementary metal oxide semiconductor floating gate defect
بواسطة: Wong, Yan Chiew
منشور في: (2008)

Development of gate oxide short (GOS) model for deep submicron CMOS transistor
بواسطة: Cheow, Kwee Siong
منشور في: (2005)

Field programmable gate array architecture of proportional-integral-derivative controller
بواسطة: Yusof, Zulkifli
منشور في: (2015)

Adaptive proportional-integral-derivative controller on field programmable gate array
بواسطة: Ee Luan, Prak Yut
منشور في: (2016)

Co relation study of gate oxide thickness and MOSFET I-V characteristic / Nurul Arina Zahaimi
بواسطة: Zahaimi, Nurul Arina
منشور في: (2011)

Plasma process-induced damage to oxide/nitride/oxide (ONO) interpoly dielectric in flash memory devices /
بواسطة: Cha, Cher Liang
منشور في: (2001)

Formation and characterization of rare earth oxides as high-k gate dielectrics on germanium substrate /
بواسطة: Onik, Tahsin Ahmed Mozaffor
منشور في: (2022)

Gate oxide short (gos) defect modeling based on 32 nm CMOS process
بواسطة: Alawey, Sahar Z
منشور في: (2014)

Characterisation of GE nanocrystals in silicon oxide /
بواسطة: Ho, Yew Wee
منشور في: (2001)

Characterization of rapid thermal oxide films /
بواسطة: Lai, Weng Hong
منشور في: (2001)

A coherent methodology for the yield and variability optimisation of discrete and integrated circuits /
بواسطة: Lee, Eveline Suok Hui
منشور في: (2000)

Optical and oxidation studies of plasma enhanced chemical vapour deposited amorphous silicon carbide films /
بواسطة: Shibu Gangadharan
منشور في: (2000)

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