Growth and characterization of nitrogen doped GaP grown by liquid phase epitaxy /
Saved in:
Main Author: | Saith, Saket |
---|---|
Format: | Thesis Book |
Language: | English |
Published: |
1999.
|
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Liquid phase epitaxy of InAs1-xSb1-x using antimony-rich melt /
by: Chatrath, Vishal
Published: (1999) -
Low-temperature grown semiconducting GaAs epilayer on Si by molecular beam epitaxy and its application to laser diodes /
by: Phua, Cheng Chiang
Published: (1997) -
Low temperature grown GaAs and its application on laser diodes /
by: Zhao, Rong
Published: (1998) -
Characterization of epitaxial surfaces and interfaces of wide band gap semiconductores /
by: Xie, Xianning
Published: (2003) -
A study of traps in semi-insulating AlxGa1-xAs grown by molecular beam epitaxy at low substrate temperatures /
by: Chen, Geng
Published: (1998)