Comparison of Ta2O5 capacitors on Si with and without rapid thermal nitridation /
Saved in:
Main Author: | Zhang, Guangyu |
---|---|
Format: | Thesis Book |
Language: | English |
Published: |
1999.
|
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
The application of rapid thermal annealing to reduce leakage current of Ta2O5 /
by: Qian, Pengwei
Published: (1999) -
Investigation on thermo-physical properties and thermal-hydraulic performance of TiO2-SiO2 nanofluids
by: Muhammad Nabil Fikri, Mohamad
Published: (2018) -
Development Of SiO2 On 4H-SiC By Direct Thermal Oxidation And Post Oxidation Annealing In HNO3 & H2O Vapour
by: Banu , Poobalan
Published: (2014) -
Cathodoluminescence from SiO2-Si structures /
by: Liu, Xu
Published: (1996) -
Al-Ta2O5-GaN
Semiconductor Device Structure
by: Yeoh, Lai Seng
Published: (2014)