A study on the hot-carrier degradation of wide and narrow channel nmosfet devices with recessed-locos isolation structures /
Saved in:
| Main Author: | Yue, Jeffrey Mun Pun |
|---|---|
| Format: | Thesis Book |
| Language: | English |
| Published: |
2000.
|
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Investigation of hot-carrier degradation in surface and buried channel pmosfets/
by: Kok, Chee Kean
Published: (2000) -
New techniques for the characterization of hot-carrier degradation in MOS devices /
by: Leang, Sern Ee
Published: (1997) -
A study of long and short channel NMOSFET on threshold voltage /
by: Norseha Ariffin
Published: (2013) -
A study of series resistance and effective channel mobility in LDD NMOSFET /
by: Oh, Gim Guan
Published: (2000) -
Characterization of hot-carrier degradation in submicrometer MOS transistors /
by: Ang, Diing Shenp
Published: (1997)
