Study on the characteristics of A1GaAs/GaAs HEMT under illumination /
Saved in:
Main Author: | Huang, Yajian |
---|---|
Format: | Thesis Book |
Language: | English |
Published: |
2001.
|
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Defect studies of MBE grown AlGaAs/GaAs and InGaAs/GaAs materials /
by: Du, An Yan
Published: (1998) -
Study of LT-GaAs and LT-A1(0.3)Ga(0.7A)As MISFET devices /
by: Rao, Rapeta V.V.V. Jagannadha
Published: (2000) -
Theoretical comparison of tensile strained inGaAs/InA1GaAs and InGaAs/InGaAsP QW lasers emitting at 1.55 um /
by: Khoo, Hong Khai
Published: (1999) -
Study of intersubband transitions in InGaAs/GaAs quantum wells /
by: H. Jamal Mohamad
Published: (1996) -
Low temperature grown GaAs and its application on laser diodes /
by: Zhao, Rong
Published: (1998)