I-V hysteresis characterization of deep-submicron mos devices /

مواد مشابهة

• Development of ultra-thin nitrogen-rich gate oxide process for deep submicron CMOS technology /
  بواسطة: Lek, Chun Meng
  منشور في: (2002)
• Simulation of 0.1um Mos devices for logic and memory technologies /
  بواسطة: Poh, Francis Yong Wee
  منشور في: (2002)
• Defectivity improvement in advanced processes and its investigation to negative bias temperature instabilities in High-K/Metal-Gate Deep-Submicron CMOS /
  بواسطة: Yasmin Abdul Wahab
  منشور في: (2015)
• Flicker noise characterization of trapping effects in submicrometer Mos transistors /
  بواسطة: Yeo, Boon Pian
  منشور في: (1998)
• New techniques for the characterization of hot-carrier degradation in MOS devices /
  بواسطة: Leang, Sern Ee
  منشور في: (1997)