Photoresist trimming technique in high-density oxygen-based plasmas for sub-0.1 um mosfet fabrication using 248-nm lithography /
محفوظ في:
| المؤلف الرئيسي: | |
|---|---|
| التنسيق: | أطروحة كتاب |
| اللغة: | English |
| منشور في: |
2002.
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| الموضوعات: | |
| الوسوم: |
إضافة وسم
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| LEADER | 00846nam a2200241 a 4500 | ||
|---|---|---|---|
| 001 | u512819 | ||
| 003 | SIRSI | ||
| 008 | 000606s2002 si a v 00 1 eng m | ||
| 035 | |a ACY-0750 | ||
| 040 | |a UMM | ||
| 090 | |a TP7 |b NUS 2002 Sin | ||
| 100 | 1 | 0 | |a Sin, Chian Yuh |
| 245 | 1 | 0 | |a Photoresist trimming technique in high-density oxygen-based plasmas for sub-0.1 um mosfet fabrication using 248-nm lithography / |c Sin Chian Yuh. |
| 260 | |c 2002. | ||
| 300 | |a xiii, 103 leaves : |b ill. ; |c 30 cm. | ||
| 502 | |a Dissertation (M.Eng.) -- National University of Singapore, 2002. | ||
| 504 | |a Bibliography: leaves 98-120. | ||
| 650 | 0 | |a Photoresists. | |
| 650 | 0 | |a Microlithography. | |
| 900 | |a NHS | ||
| 948 | |a 02/06/2003 |b 02/06/2003 | ||
| 596 | |a 1 | ||
| 999 | |a TP7 NUS 2002 SIN |w LC |c 1 |i A511117507 |l B_KOM4 |m P01UTAMA |r Y |s Y |t TESIS |u 5/6/2003 |o .PUBLIC. bkom 4 : 43268 | ||