Xu, Y. (2002). Computer simulation of silicon nitride deposition in PECVD reactors using SiCl4/NH3/Ar mixtures as precursors.
Chicago Style (17th ed.) CitationXu, Yunhua. Computer Simulation of Silicon Nitride Deposition in PECVD Reactors Using SiCl4/NH3/Ar Mixtures as Precursors. 2002.
MLA引文Xu, Yunhua. Computer Simulation of Silicon Nitride Deposition in PECVD Reactors Using SiCl4/NH3/Ar Mixtures as Precursors. 2002.
警告:这些引文格式不一定是100%准确.