Latent damage generation in silicon dioxide under high-field impulse and constant-bias stressing /
Saved in:
| Main Author: | |
|---|---|
| Format: | Thesis Book |
| Language: | English |
| Published: |
2001.
|
| Subjects: | |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| LEADER | 00933cam a2200229 a 4500 | ||
|---|---|---|---|
| 001 | u692078 | ||
| 003 | SIRSI | ||
| 008 | 021126s2001 si a v 00 10 eng m | ||
| 035 | |a ACW-4843 | ||
| 040 | |a UMM | ||
| 090 | |a TK7 |b NUSP 2001 Lim | ||
| 100 | 1 | 0 | |a Lim, Peng Soon. |
| 245 | 1 | 0 | |a Latent damage generation in silicon dioxide under high-field impulse and constant-bias stressing / |c Lim Peng Soon. |
| 260 | |c 2001. | ||
| 300 | |a xxvi, 173 leaves : |b ill. ; |c 30 cm. | ||
| 502 | |a Thesis (Ph.D.) -- Dept. of Electrical & Computer Engineering, Faculty of Engineering, National University of Singapore, 2001. | ||
| 504 | |a Includes bibliographical references. | ||
| 650 | 0 | |a Silica. | |
| 650 | 0 | |a Metal oxide semiconductor field-effect transistors |x Reliability | |
| 948 | |a 26/11/2002 |b 26/08/2004 | ||
| 596 | |a 1 | ||
| 999 | |a TK7 NUSP 2001 LIM |w LC |c 1 |i A510653108 |d 17/7/2006 |f 17/7/2006 |g 1 |l B_KOM4 |m P01UTAMA |r Y |s Y |t TESIS |u 14/2/2005 |o .PUBLIC. BKOM 4 :43105 | ||