Integration of self-aligned silicide (salicide) process for sub-0.25 [mu]m CMOS technology /
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| Main Author: | |
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| Format: | Thesis Book |
| Language: | English |
| Published: |
2002.
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| LEADER | 00953cam a2200241 a 4500 | ||
|---|---|---|---|
| 001 | u696244 | ||
| 003 | SIRSI | ||
| 008 | 000929s2002 si a v 00 10 eng | ||
| 035 | |a ADB-3778 | ||
| 040 | |a UMM | ||
| 090 | |a TK7 |b NUSP 2002 Ho | ||
| 100 | 1 | 0 | |a Ho, Chaw Sing. |
| 245 | 1 | 0 | |a Integration of self-aligned silicide (salicide) process for sub-0.25 [mu]m CMOS technology / |c Ho Chaw Sing. |
| 260 | |c 2002. | ||
| 300 | |a xxiv, [140] leaves : |b ill. ; |c 30 cm. | ||
| 500 | |a [mu] is represents with Greek alphabet. | ||
| 502 | |a Thesis (Ph.D.) -- Dept. of Electrical & Computer Engineering, Faculty of Engineering, National University of Singapore, 2002. | ||
| 504 | |a Bibliography: leaves 123-136. | ||
| 650 | 0 | |a Silicides. | |
| 650 | 0 | |a Metal oxide semiconductors, Complementary. | |
| 948 | |a 26/05/2004 |b 26/05/2004 | ||
| 596 | |a 1 | ||
| 999 | |a TK7 NUSP 2002 HO |w LC |c 1 |i A511145343 |d 5/9/2006 |f 5/9/2006 |g 1 |l B_KOM4 |m P01UTAMA |r Y |s Y |t TESIS |u 5/8/2005 |o .PUBLIC. BKOM 4 :43121 | ||