Hydrogenated amorphous silicon by pulsed plasma enhanced chemical vapour deposition technique /
محفوظ في:
| المؤلف الرئيسي: | |
|---|---|
| التنسيق: | أطروحة كتاب |
| اللغة: | English |
| منشور في: |
2005.
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| الموضوعات: | |
| الوسوم: |
إضافة وسم
لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!
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| 001 | u711760 | ||
| 003 | SIRSI | ||
| 008 | 050912s2005 my t 000 0 eng m | ||
| 040 | |a UMM | ||
| 090 | |a QC3 |b UM 2005 Goh | ||
| 100 | 1 | 0 | |a Goh, Boon Tong. |
| 245 | 1 | 0 | |a Hydrogenated amorphous silicon by pulsed plasma enhanced chemical vapour deposition technique / |c Goh Boon Tong. |
| 260 | |c 2005. | ||
| 300 | |a xvi, 189 leaves : |b ill. ; |c 30 cm. | ||
| 502 | |a Dissertation (M.Sc.) -- Jabatan Fizik, Fakulti Sains, Universiti Malaya, 2005. | ||
| 504 | |a Bibliography: leaves 180-181. | ||
| 650 | 0 | |a Plasma-enhanced chemical vapor deposition. | |
| 650 | 0 | |a Amorphous semiconductors. | |
| 710 | 2 | 0 | |a Universiti Malaya. |b Jabatan Fizik. |
| 596 | |a 1 | ||
| 999 | |a QC3 UM 2005 GOH |w LC |c 1 |i A511905085 |l STACKS |m P01UTAMA |r Y |s Y |t TESIS |u 4/8/2006 | ||