Effect of annealing on direct current and pulse PECVD hydrogenated amorphous silicon /
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| Main Author: | |
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| Format: | Thesis Book |
| Language: | English |
| Published: |
2004.
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| LEADER | 00909cam a2200241ma 4500 | ||
|---|---|---|---|
| 001 | u723065 | ||
| 003 | SIRSI | ||
| 005 | 200606051539 | ||
| 008 | 060605s2004 my t 000 0 eng m | ||
| 040 | |a UMM | ||
| 090 | |a TA403 |b UM 2004 Lim | ||
| 100 | 1 | 0 | |a Lim, Seck Chai |
| 245 | 1 | 0 | |a Effect of annealing on direct current and pulse PECVD hydrogenated amorphous silicon / |c Lim Seck Chai. |
| 260 | |c 2004. | ||
| 300 | |a [xiii], 139 leaves : |b ill. ; |c 30cm | ||
| 502 | |a Dissertation (M.Tech. (Material Sc.)) -- Jabatan Fizik, Fakulti Sains, Universiti Malaya, 2005. | ||
| 504 | |a Bibliography: leaves 130-134. | ||
| 650 | 0 | |a Amorphous semiconductors. | |
| 650 | 0 | |a Plasma-enhanced chemical vapor deposition. | |
| 650 | 0 | |a Annealing of metals. | |
| 710 | |a Universiti Malaya. |b Jabatan Fizik. | ||
| 596 | |a 1 | ||
| 999 | |a TA403 UM 2004 LIM |w LC |c 1 |i A511937907 |d 19/9/2006 |f 19/9/2006 |g 1 |l STACKS |m P01UTAMA |r Y |s Y |t TESIS |u 18/9/2006 | ||