APA引文

Yong, Y. H. (2006). Gate oxide integrity (GOI) for C13 (0.13 [micro]m) silicon processing technology.

Chicago Style (17th ed.) Citation

Yong, Yoong Hooi. Gate Oxide Integrity (GOI) for C13 (0.13 [micro]m) Silicon Processing Technology. 2006.

MLA引文

Yong, Yoong Hooi. Gate Oxide Integrity (GOI) for C13 (0.13 [micro]m) Silicon Processing Technology. 2006.

警告：這些引文格式不一定是100％准確.