Physical properties of hydrogenated silicon (Si:H) thin films : the effect of RF power during deposition /
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| Main Author: | |
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| Format: | Thesis Book |
| Language: | English |
| Published: |
2008.
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| Subjects: | |
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| LEADER | 00891cam a2200253 a 4500 | ||
|---|---|---|---|
| 001 | u764727 | ||
| 003 | SIRSI | ||
| 005 | 200901301554 | ||
| 008 | 090130s2008 my t 000 0 eng m | ||
| 040 | |a UMM | ||
| 090 | |a QC3 |b UM 2008 Rama | ||
| 100 | 0 | |a Ramlee Adnan. | |
| 245 | 1 | 0 | |a Physical properties of hydrogenated silicon (Si:H) thin films : |b the effect of RF power during deposition / |c Ramlee bin Adnan. |
| 260 | |c 2008. | ||
| 300 | |a iii, 63 leaves : |b ill. ; |c 30 cm. | ||
| 502 | |a Dissertation (M.Sc.) -- Jabatan Fizik, Fakulti Sains, Universiti Malaya, 2008. | ||
| 504 | |a Bibliography: leaves 60-63. | ||
| 650 | 0 | |a Thin films. | |
| 650 | 0 | |a Plasma frequencies. | |
| 650 | 0 | |a Optoelectronics. | |
| 710 | 2 | |a Universiti Malaya. |b Jabatan Fizik. | |
| 900 | |a ZSA-ZA | ||
| 596 | |a 1 | ||
| 999 | |a QC3 UM 2008 RAMA |w LC |c 1 |i A513443876 |d 2/11/2009 |f 2/11/2009 |g 1 |l STACKS |m P01UTAMA |r Y |s Y |t TESIS |u 2/11/2009 | ||