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  1. 1
    Bimetallic oxide derived from metal organic framework (MOF) as potential electrode materials for supercapacitor /
    由 Farah Juliana Juni
    出版 2021
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  2. 2
    Study of Schottky and Poole-Frenkel conduction mechanism in Fe304-gamma-Fe2O3/SiO2/n-type Si system /
    由 Chung, Adrian Ning Hann
    出版 2021
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  3. 3
    Electron beam induced current/tunneling current microscopy of thin silicon dioxide films on silicon /
    由 Pey, Kin San
    出版 1994
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  4. 4
    A comparative study of MOS capacitors fabricated on single-crystal and polycrystalline silicon /
    由 Tay, Tuang Mee
    出版 1990
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  5. 5
    Modelling and simulation of hot-carrier degradation in submicrometre MOS transistors /
    由 Seah, Boon Pian
    出版 1995
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  6. 6
    The influence of a layer of oxide on electromigration performance of Al/Cu/Si metal lines /
    由 Koh, David Khar Ann
    出版 1995
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  7. 7
    Electrical characterisation of MOS gate oxide /
    由 Ooi, Joo Aik
    出版 1996
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  8. 8
    Tunnelling phenomena in rapid thermal annealed silicon : silicon oxide systems /
    由 Poon, Fook Weng
    出版 1997
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  9. 9
    Hot-carrier characterization of tungsten polycide gate and graded-junction MOS transistors /
    由 Lou, Choon Leong
    出版 1997
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  10. 10
    Development of empirical potential profile model for unusual energy separation of subbands in inidium-absorbed Si(111) inversion layer /
    由 Nur Idayu binti Ayob
    出版 2015
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  11. 11
    A correlation of oxide trap density and TDDB characteristics of very thin SiO2 films /
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  12. 12
    Lateral Diffused Metal Oxide Semiconductor (LDMOS) transistor Safe Operating Area (HCI-SOA) characterization under hot carrier injection /
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  13. 13
    Fabrikasi sensor tekanan kapasitif sangat rendah (STKSR) menggunakan teknologi proses piawai CMOS /
    由 Muhammad Ramdzan Buyong
    出版 2010
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  14. 14
    Characterizing the channel interface properties of vertical double-diffused metal-oxide semiconductor (DMOS) with charge pumping method /
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  15. 15
    Formation of ZrO2 gate dielectric on Ge substrate by thermal oxidation and post annealing for metal-oxide-semiconductor devices /
    由 Lei, Zhen Ce
    出版 2019
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  16. 16
    Reliability investigation of MOS devices under high current impulse stressing /
    由 Teh, Gim Leong
    出版 1998
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  17. 17
    Degradation and annealing of electrically-stressed thin oxide in MOS devices /
    由 Ng, Wee Thong
    出版 1998
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  18. 18
    Effect of X-ray lithography on MOS device reliability /
    由 Kim, Sun Jung
    出版 2001
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  19. 19
    A study of charge injection and removal in a floating gate ionisation- injection NOS [FIMOS] cell /
    由 Lee, Kok Choy
    出版 1987
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  20. 20
    Optimization and characterization of 130 Nm CMOS transistor design using TCAD simulation /
    由 Hani Noorashiqin Abd Majid
    出版 2007
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