Kesan sepuhlindap ke atas ciri elektrik sentuhan Ohmik dan Schottky untuk peranti transistor elektron berkelincahan tinggi (HEMTs) /
Saved in:
主要作者: | Asban Dolah (Author) |
---|---|
格式: | Thesis 圖書 |
語言: | Malay |
主題: | |
標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|
相似書籍
-
Study of LT-GaAs and LT-A1(0.3)Ga(0.7A)As MISFET devices /
由: Rao, Rapeta V.V.V. Jagannadha
出版: (2000) -
Copper-induced deep level defects in GaAs0.6P0.4 alloy semiconductor /
由: Hu, Peh Yin
出版: (1992) -
Pulse-duration dependent capacitance analysis and its application to copper in GaAs0.6P0.4 /
由: Han, Meng Kwong
出版: (1994) -
Large signal modeling of GaAs FETs for the simulation of nonlinear microwave circuits /
由: Cao, Jiang
出版: (1998) -
A study of GaAs/InGaAs/AIAs stepped quantum wells by C-V profiling /
由: Mohd. Edee Rozey Abd. Manaf
出版: (2001)