Kesan sepuhlindap ke atas ciri elektrik sentuhan Ohmik dan Schottky untuk peranti transistor elektron berkelincahan tinggi (HEMTs) /

Kesan sepuhlindap ke atas ciri elektrik sentuhan Ohmik dan Schottky untuk peranti transistor elektron berkelincahan tinggi (HEMTs) /

محفوظ في:

التفاصيل البيبلوغرافية
المؤلف الرئيسي:	Asban Dolah (مؤلف)
التنسيق:	أطروحة كتاب
اللغة:	Malay
الموضوعات:	Universiti Kebangsaan Malaysia > Dissertations. Metal semiconductor field-effect transistors. Gallium arsenide semiconductors. Dissertations, Academic > Malaysia.
الوسوم:	إضافة وسم لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!

مواد مشابهة

Study of LT-GaAs and LT-A1(0.3)Ga(0.7A)As MISFET devices /
بواسطة: Rao, Rapeta V.V.V. Jagannadha
منشور في: (2000)

Copper-induced deep level defects in GaAs0.6P0.4 alloy semiconductor /
بواسطة: Hu, Peh Yin
منشور في: (1992)

Pulse-duration dependent capacitance analysis and its application to copper in GaAs0.6P0.4 /
بواسطة: Han, Meng Kwong
منشور في: (1994)

Large signal modeling of GaAs FETs for the simulation of nonlinear microwave circuits /
بواسطة: Cao, Jiang
منشور في: (1998)

A study of GaAs/InGaAs/AIAs stepped quantum wells by C-V profiling /
بواسطة: Mohd. Edee Rozey Abd. Manaf
منشور في: (2001)

A study of traps in semi-insulating GaAs grown by MBE at low temperatures /
بواسطة: Goo, Chuen Hang
منشور في: (1997)

Studies on clean and nitrided GaAs(001) and synthesis of carbon nitride films /
بواسطة: Li, Yungui
منشور في: (2001)

Defect studies of MBE grown AlGaAs/GaAs and InGaAs/GaAs materials /
بواسطة: Du, An Yan
منشور في: (1998)

Low temperature grown GaAs and its application on laser diodes /
بواسطة: Zhao, Rong
منشور في: (1998)

Low-temperature grown semiconducting GaAs epilayer on Si by molecular beam epitaxy and its application to laser diodes /
بواسطة: Phua, Cheng Chiang
منشور في: (1997)

Study of MBE grown AIInGaAs/AIGaAs quantum wells and their application in semiconductor lasers /
بواسطة: Zhang, Zhihe
منشور في: (1997)

Laser annealing of donor implanted gallium arsenide /
بواسطة: Akintunde, J. A.
منشور في: (1981)

Growth and characterization of InGaAlAs quaternary alloy for laser diode applications /
بواسطة: Ramam Akkipeddi
منشور في: (1997)

Defect studies in gallium arsenide phosphide and confirmation of negative-U property of sulphur related DX center /
بواسطة: Luo, Yingying
منشور في: (1994)

Tight-binding molecular dynamics studies of clusters and defects in GaAs and AlAs /
بواسطة: Quek, Hoon Khim
منشور في: (1998)

Heterojunction bipolar transistor (HBT) for high power applications /
بواسطة: Heng, Chun Huat
منشور في: (1998)

Design and construction of charge pumping technique for MOS transistor characterization /
بواسطة: Lee, Hock Guan
منشور في: (2004)

Fabrication and characterization of Ohmic contacts made with Au/Ni/Ge/Au multilayer metallization system on N-type gallium arsenide /
بواسطة: Lee, Seng Hin
منشور في: (1990)

Optimization and characterization of 130 Nm CMOS transistor design using TCAD simulation /
بواسطة: Hani Noorashiqin Abd Majid
منشور في: (2007)

Reactions of sulfur containing small molecules on the GaAs(100) surface /
بواسطة: Zou, Zheng
منشور في: (1998)

A study of hot carrier degradation in LDMOS transistor /
بواسطة: Atikah Razi
منشور في: (2013)

Impact of fabrication process on hot carrier injection in VDMOS transistor /
بواسطة: Murti, Wijaya Bayu
منشور في: (2013)

Junctionless transistors: parametric study with conventional doping in MOSFETS

Design of compound semiconductor heterojunction bipolar transistors (HBTs) for improved device performance /
بواسطة: Peng, Cai Jun
منشور في: (1996)

Integration of nanoporous structure into vertical organic field effect transistor /
بواسطة: Muhammad Zharfan Mohd Halizan
منشور في: (2018)

Characterization of hot-carrier degradation in submicrometer MOS transistors /
بواسطة: Ang, Diing Shenp
منشور في: (1997)

Pencampur PHEMT GaAs untuk aplikasi pada 28 GHz dan berjalur lebar /
بواسطة: Nuriha Abd. Rahman
منشور في: (2004)

Hot-carrier characterization of submicrometer MOS transistors : subthreshold degradation and channel-width effect /
بواسطة: Qin, Wei Han
منشور في: (1998)

Vanadyl tetrabutyltetrakis (dimethylamino) phthalocyanine based thin films for organic sensor and transistor applications /
بواسطة: Nur Adilah Roslan
منشور في: (2020)

Optical monitoring of alluminium deposition on gallium arsenide by chemical beam epitaxy /
بواسطة: Muhammad Azmi Abdul Hamid
منشور في: (1999)

Simulation of charge-trapping in nano-scale mosfets in the presence of random-dopants-induced variability /
بواسطة: Muhammad Faiz Bukhori
منشور في: (2011)

The effect of doping concentration on the characteristics of n-channel MOSFET /
بواسطة: Teen, Soh Hong
منشور في: (2005)

Development of empirical potential profile model for unusual energy separation of subbands in inidium-absorbed Si(111) inversion layer /
بواسطة: Nur Idayu binti Ayob
منشور في: (2015)

New techniques for the characterization of hot-carrier degradation in MOS devices /
بواسطة: Leang, Sern Ee
منشور في: (1997)

Characterization of pmosfet degradation in negative bias temperature instability test /
بواسطة: Soon, Foo Yew
منشور في: (2012)

Design of silicon nitride metal-insulator-metal capacitor using 0.15 um gallium arsenide technology
بواسطة: Sanusi, Rasidah
منشور في: (2010)

Optical characterization of wide energy gap group III-nitride semiconductors /
بواسطة: Liu, Wei
منشور في: (1999)

A study on the impact of processing parameters on low-voltage power MOSFET /
بواسطة: Nur Aqilah Othman
منشور في: (2012)

Optimization of organic field effect transistor based on poly (3-Hexylthiophene) via interface modifications /
بواسطة: Chua, Chong Lim
منشور في: (2015)

A study of long and short channel NMOSFET on threshold voltage /
بواسطة: Norseha Ariffin
منشور في: (2013)

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