Commercial SiGe and GaAs as low noise amplifiers (LNA) performance under electron radiation /

Commercial SiGe and GaAs as low noise amplifiers (LNA) performance under electron radiation /

In this dissertation, a characterization and comparison between the effects of Electron irradiation on low noise amplifiers (LNAs) implemented in a Silicon-Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) and Gallium-Arsenide (GaAs) HBT technologies, respectively, was carried out. Nowadays,...

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書目詳細資料
主要作者:	Youssouf, Abdouraouf Said (Author)
格式:	Thesis
語言:	English
出版:	Kuala Lumpur : Kulliyyah of Engineering, International Islamic University Malaysia, 2016
主題:	Theses, IIUM local
在線閱讀:	Click here to view 1st 24 pages of the thesis. Members can view fulltext at the specified PCs in the library.
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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