Monte Carlo Simulations Of Avalanche Multiplication, Noise And Speed In Submicron InP
A stochastic nature of avalanche photodiode (APD) model is developed using Monte Carlo method to study the avalanche characteristics in submicron InP p= -i- n+ diodes. The avalanche characteristics such as multiplication gain, excess noise factor and avalanche built-up time in submicron InP p+ -i-n+...
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| 格式: | Thesis |
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2005
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