Investigation on P-N junction I-V characteristics of p-Si/n-TiO2 / Mohd Farhan Azwa Alias
The effect of annealing time on electrical properties and physical properties (surface morphology) of p-n junction between p-type silicon (Si) and n-type titanium oxide (TiC^) were investigated. By varying the parameter of the annealing time, the Ti02 thin films were deposited on silicon and glass s...
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| Format: | Thesis |
| Language: | English |
| Published: |
2015
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| Online Access: | https://ir.uitm.edu.my/id/eprint/102781/1/102781.pdf |
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