Investigation on P-N junction I-V characteristics of p-Si/n-TiO2 / Mohd Farhan Azwa Alias
The effect of annealing time on electrical properties and physical properties (surface morphology) of p-n junction between p-type silicon (Si) and n-type titanium oxide (TiC^) were investigated. By varying the parameter of the annealing time, the Ti02 thin films were deposited on silicon and glass s...
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| Language: | English |
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2015
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| Online Access: | https://ir.uitm.edu.my/id/eprint/102781/1/102781.pdf |
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my-uitm-ir.1027812024-11-13T03:38:42Z Investigation on P-N junction I-V characteristics of p-Si/n-TiO2 / Mohd Farhan Azwa Alias 2015 Alias, Mohd Farhan Azwa Titanium dioxide The effect of annealing time on electrical properties and physical properties (surface morphology) of p-n junction between p-type silicon (Si) and n-type titanium oxide (TiC^) were investigated. By varying the parameter of the annealing time, the Ti02 thin films were deposited on silicon and glass substrates by using spin coating technique. Characterizations were done using current-voltage (I-V) measurement and atomic force microscope (AFM).The TiC>2 thin films were annealed at the 450°C. The annealing time varies from 30, 40, 60, 80, and 100 of minutes. The (I-V) measurement showed that at 80 minutes annealing time, the conductivity is higher than other annealing time. The AFM investigation showed roughness of thin film increase with longer annealing time. The result showed that the electrical and physical properties of TiO; could be affected by changing the annealing time. 2015 Thesis https://ir.uitm.edu.my/id/eprint/102781/ https://ir.uitm.edu.my/id/eprint/102781/1/102781.pdf text en public degree Universiti Teknologi MARA (UiTM) Faculty of Electrical Engineering |
| institution |
Universiti Teknologi MARA |
| collection |
UiTM Institutional Repository |
| language |
English |
| topic |
Titanium dioxide |
| spellingShingle |
Titanium dioxide Alias, Mohd Farhan Azwa Investigation on P-N junction I-V characteristics of p-Si/n-TiO2 / Mohd Farhan Azwa Alias |
| description |
The effect of annealing time on electrical properties and physical properties (surface morphology) of p-n junction between p-type silicon (Si) and n-type titanium oxide (TiC^) were investigated. By varying the parameter of the annealing time, the Ti02 thin films were deposited on silicon and glass substrates by using spin coating technique. Characterizations were done using current-voltage (I-V) measurement and atomic force microscope (AFM).The TiC>2 thin films were annealed at the 450°C. The annealing time varies from 30, 40, 60, 80, and 100 of minutes. The (I-V) measurement showed that at 80 minutes annealing time, the conductivity is higher than other annealing time. The AFM investigation showed roughness of thin film increase with longer annealing time. The result showed that the electrical and physical properties of TiO; could be affected by changing the annealing time. |
| format |
Thesis |
| qualification_level |
Bachelor degree |
| author |
Alias, Mohd Farhan Azwa |
| author_facet |
Alias, Mohd Farhan Azwa |
| author_sort |
Alias, Mohd Farhan Azwa |
| title |
Investigation on P-N junction I-V characteristics of p-Si/n-TiO2 / Mohd Farhan Azwa Alias |
| title_short |
Investigation on P-N junction I-V characteristics of p-Si/n-TiO2 / Mohd Farhan Azwa Alias |
| title_full |
Investigation on P-N junction I-V characteristics of p-Si/n-TiO2 / Mohd Farhan Azwa Alias |
| title_fullStr |
Investigation on P-N junction I-V characteristics of p-Si/n-TiO2 / Mohd Farhan Azwa Alias |
| title_full_unstemmed |
Investigation on P-N junction I-V characteristics of p-Si/n-TiO2 / Mohd Farhan Azwa Alias |
| title_sort |
investigation on p-n junction i-v characteristics of p-si/n-tio2 / mohd farhan azwa alias |
| granting_institution |
Universiti Teknologi MARA (UiTM) |
| granting_department |
Faculty of Electrical Engineering |
| publishDate |
2015 |
| url |
https://ir.uitm.edu.my/id/eprint/102781/1/102781.pdf |
| _version_ |
1818588053755658240 |