Fabrication and characterization of 130nm PMOS device using Silvaco simulator / Nur Hidayah Othman
Nowadays, downsizing the size of metal-oxide semiconductor field effect transistor (mosfet) is the recent trends in MOSFET technologies such as the aggressive scaling of gate length, the decrease in on-current with scaling, and the increased demand for a variety of transistor types for use in a wide...
Saved in:
主要作者: | Othman, Nur Hidayah |
---|---|
格式: | Thesis |
語言: | English |
出版: |
2007
|
主題: | |
在線閱讀: | https://ir.uitm.edu.my/id/eprint/103063/1/103063.pdf |
標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|
相似書籍
-
Optimization and characterization of 130 Nm CMOS transistor design using TCAD simulation /
由: Hani Noorashiqin Abd Majid
出版: (2007) -
Fabrication and characterization of 130nm NMOS using silvaco software / Mas Fezah Latib
由: Latib, Mas Fezah
出版: (2007) -
Developing incremental capacity during seasonal demand for technologies beyond 90 NM in semiconductor fabrication industry
由: Mohd Azizi, Chik -
Study on alignment capability and overlay performance in back-end of line lithography process for 130nm technology /
由: Lau, Siau Yen -
Simulation, fabrication and characterization of PMOS transistor device
由: Yusuf, Siti Idzura
出版: (2006)