Design of 6T memory cell and sense amplifier for SRAM / Nor Shariza Bashar
This paper presents of lbit SRAM IC design consists of SRAM cells, precharge and PMOS across amplifier using TSMC 0.25um technology. The PMOS cross amplifier is designed to sense the signal voltage on the bit line from the memory cell for the read process because it has better output driving capabil...
Saved in:
| Main Author: | |
|---|---|
| Format: | Thesis |
| Language: | English |
| Published: |
2006
|
| Subjects: | |
| Online Access: | https://ir.uitm.edu.my/id/eprint/98641/1/98641.pdf |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|