Performance improvement of optoelectronic devices using Group III Nitride based quantum dot
Quantum dot has become a subject of incredible interest in the field of semiconductor optoelectronic device design for the researchers due to some of their unique properties. Among the wide range of optoelectronic devices some important characteristics of solar cell and laser have been studied ex...
Saved in:
| 格式: | Thesis |
|---|---|
| 語言: | English |
| 主題: | |
| 在線閱讀: | http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/72234/1/Page%201-24.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/72234/2/Full%20text.pdf |
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|