Performance improvement of optoelectronic devices using Group III Nitride based quantum dot
Quantum dot has become a subject of incredible interest in the field of semiconductor optoelectronic device design for the researchers due to some of their unique properties. Among the wide range of optoelectronic devices some important characteristics of solar cell and laser have been studied ex...
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| Format: | Thesis |
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| Language: | English |
| Subjects: | |
| Online Access: | http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/72234/1/Page%201-24.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/72234/2/Full%20text.pdf |
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| Summary: | Quantum dot has become a subject of incredible interest in the field of semiconductor
optoelectronic device design for the researchers due to some of their unique properties.
Among the wide range of optoelectronic devices some important characteristics of solar
cell and laser have been studied extensively. These two devices are chosen because of
the importance of these optoelectronic semiconductor devices in the field of renewable
energy and optical fiber communication respectively. Recently it has been
acknowledged that the researchers are paying more and more attention to the group-III
nitride based quantum dots. Therefore this research is devoted to investigate the
performance improvement of solar cell and laser using InN based quantum dot in the
active layer of the device structure. In this research work the performance improvement
of both these devices have been achieved by changing the active layer material without
affecting other structural parameters. The effect of lattice constant on band gap energy
optimization of has been investigated initially. From the numerical analysis
it has been found that offers a band gap energy ranging from 0.7eV - 3.5eV,
which makes it a suitable material for solar cell to absorb a wide range of light energy.
Furthermore, it has been demonstrated that In0.87Ga0.13N is capable of emitting light at
the wavelength of 1.55μm, which offers the lowest attenuation for signal transmission
through optical fiber. Therefore the result of initial investigation ascertains that
can be a promising material for the fabrication of solar cell as well as laser. |
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