Performance improvement of optoelectronic devices using Group III Nitride based quantum dot

Performance improvement of optoelectronic devices using Group III Nitride based quantum dot

Quantum dot has become a subject of incredible interest in the field of semiconductor optoelectronic device design for the researchers due to some of their unique properties. Among the wide range of optoelectronic devices some important characteristics of solar cell and laser have been studied ex...

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書目詳細資料
格式:	Thesis
語言:	English
主題:	Optoelectronic device Quantum dot Optoelectronic devices
在線閱讀:	http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/72234/1/Page%201-24.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/72234/2/Full%20text.pdf
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