The optimization of P-i-N power switching diode in term of reverse breakdown voltage and electrostatic disharge performance
The Power switching diode (P-i-N diode) is one of the widely used diode in high power semiconductor devices as circuit protection. This popularity comes from excellent reverse voltage blocking and better electrostatic discharge (ESD) performance. As a result, the exploration on the P-i-N power sw...
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| 格式: | Thesis |
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| 語言: | English |
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| 在線閱讀: | http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/76629/1/Page%201-24.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/76629/2/Full%20text.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/76629/3/Declaration%20Form.pdf |
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