Thermal-mechanical analysis of bonding pad in insulated gate bipolar transistor
In development of the die stacking interconnection technology, the thermal analysis on stacked dies are commonly engaged in semiconductor products. However, thermal issues are not the main criteria for stack die configuration and thus the combined effects of thermal and mechanical stresses are ov...
Saved in:
| 格式: | Thesis |
|---|---|
| 語言: | English |
| 主題: | |
| 在線閱讀: | http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/77429/1/Page%201-24.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/77429/2/Full%20text.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/77429/3/Declaration%20Form.pdf |
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|