Thermal-mechanical analysis of bonding pad in insulated gate bipolar transistor

Thermal-mechanical analysis of bonding pad in insulated gate bipolar transistor

In development of the die stacking interconnection technology, the thermal analysis on stacked dies are commonly engaged in semiconductor products. However, thermal issues are not the main criteria for stack die configuration and thus the combined effects of thermal and mechanical stresses are ov...

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书目详细资料
格式:	Thesis
语言:	English
主题:	Insulated gate bipolar transistors Bipolar transistors Wire bonding (Electronic packaging) Planar transistors
在线阅读:	http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/77429/1/Page%201-24.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/77429/2/Full%20text.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/77429/3/Declaration%20Form.pdf
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