Optimization of P-I-N rectifier diode for yield and robustness improvement using DOE

The Power Rectifier (P-i-N rectifier) is one of the widely used diode in high power semiconductor devices as circuit protection. This popularity comes from excellent reverse voltage blocking and fast switching time. As a result, the exploration on the power rectifiers to make the device more robust...

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Format: Thesis
Language:English
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Online Access:http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/78205/1/Page%201-24.pdf
http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/78205/2/Full%20text.pdf
http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/78205/4/Cheah%20Chai%20Mee.pdf
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