Optimization of P-I-N rectifier diode for yield and robustness improvement using DOE
The Power Rectifier (P-i-N rectifier) is one of the widely used diode in high power semiconductor devices as circuit protection. This popularity comes from excellent reverse voltage blocking and fast switching time. As a result, the exploration on the power rectifiers to make the device more robust...
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| Format: | Thesis |
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| Language: | English |
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| Online Access: | http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/78205/1/Page%201-24.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/78205/2/Full%20text.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/78205/4/Cheah%20Chai%20Mee.pdf |
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| Summary: | The Power Rectifier (P-i-N rectifier) is one of the widely used diode in high power semiconductor devices as circuit protection. This popularity comes from excellent reverse voltage blocking and fast switching time. As a result, the exploration on the power rectifiers to make the device more robust and competitive in the market is boundless, which aims for continuous improvement on the electrical characteristics. In general, the P-i-N rectifier is consists of a highly-doped P-N junction with a low doped intrinsic region sandwiched in between the regions. Such characteristics have made the design of as high as 1000 V reverse
voltage diode is possible by lowering the switching time. This thesis describes the research work done on the power rectifier by exploring the device characteristics and optimizing the input responses using Design of Experiment (DOE) techinique. Parameter such as epitaxial layer specification, junction drive time and also other internal fabrication processes were optimized, to produce a desired device robustness and yield improvement. The main electrical characteristics namely reverse recovery lifetime, reverse voltage, reverse leakage current and such, were investigated and analyzed. The results show that with implementation
of optimized epitaxial thickness and resistivity, the P-i-N power diodes were able to withstand high reverse voltage. The optimum epitaxial thickness for 600 V device is at 96 μm. The epitaxial thickness is a dominant factor as compared to epitaxial resistivity and boron diffusion time. Next, the variation in junction drive time shows a direct relationship between the junction depth of the P-i-N rectifier to the reverse voltage for 200 V device. Each additional 60 minutes in boron diffusion time will increase the device reverse voltage by 30 V. Lastly, the investigations are about reverse recovery lifetime and forward voltage of the power diode. |
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