Rf-Mbe Growth Of Iii-Nitrides Heterostructures For Light Detecting Applications
Dalam penyelidikan ini, GaN p-n struktur homo, AlN/GaN struktur hetero, dan AlxGa1-xN/GaN struktur hetero telah berjaya ditumbuhkan di atas substrat silikon (Si) (111) menerusi epitaksi alur molekul plasma terbantu (MBE) untuk aplikasi pengesan foto. Galium (7N) dan aluminium (6N5) dengan ketulen...
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| Main Author: | |
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| Format: | Thesis |
| Language: | English |
| Published: |
2016
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| Subjects: | |
| Online Access: | http://eprints.usm.my/31760/1/MOHD_ZAKI_BIN_MOHD_YUSOFF_24%28NN%29.pdf |
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| Summary: | Dalam penyelidikan ini, GaN p-n struktur homo, AlN/GaN struktur hetero,
dan AlxGa1-xN/GaN struktur hetero telah berjaya ditumbuhkan di atas substrat silikon
(Si) (111) menerusi epitaksi alur molekul plasma terbantu (MBE) untuk aplikasi
pengesan foto. Galium (7N) dan aluminium (6N5) dengan ketulenan yang tinggi
telah digunakan dalam sel Knudsen dan nitrogen (7N) berketulenan tinggi telah
dibekalkan kepada frekuensi radio (RF) 13.56 MHz untuk menjana sumber spesis
nitrogen reaktif. Nilai tekanan nitrogen dan kuasa pelepasan masing-masing
ditetapkan malar pada 1.5x10-5 Torr dan 300 W sepanjang projek ini. Morfologi
permukaan, sifat-sifat struktur dan optik daripada semua sampel telah disiasat dengan
menggunakan pantulan belauan elektron bertenaga tinggi (RHEED), mikroskop
imbasan elektron (SEM), mikroskop imbasan electron pancaran medan (FESEM),
mikroskop electron transmisi (TEM), mikroskop daya atom (AFM), belauan sinar-X
beresolusi tinggi (XRD-HR), fotoluminesen (PL), dan spektroskopi Raman, masing-masing.
In this research work, GaN p-n homostructures, AlN/GaN heterostructures,
and AlxGa1-xN/Ga heterostructures were successfully grown on silicon (Si) (111)
substrates by plasma-assisted molecular beam epitaxy (MBE) for photodetector
applications. High purity gallium (7N) and aluminum (6N5) were used in the
Knudsen cells and high purity nitrogen (7N) was supplied to 13.56 MHz radio
frequency (RF) source to generate reactive nitrogen species. The nitrogen pressure
and discharge power values were kept constant at 1.5x10-5 Torr and 300 W during
this project, respectively. The surface morphology, structural and optical properties
of all the samples were investigated by using reflection high energy electron
diffraction (RHEED), scanning electron microscopy (SEM), field emission scanning
electron microscopy (FESEM), transmission electron microscopy, atomic force
microscopy (AFM), high-resolution X-ray diffraction (HR-XRD),
photoluminescence (PL), and Raman spectroscopy, respectively. |
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