A Study On Process-Generated Crystal Defects And Corresponding Leakage Current Of P-N Junctions In Bipolar Transistors
An investigation into excess reverse leakage current of p-n junction process control structures in an industrial bipolar junction transistor technology is detailed in this work. Excess leakage is shown to be caused by rod-like crystal defects generated from a boron implantation process. The ro...
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| 主要作者: | |
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| 格式: | Thesis |
| 语言: | English |
| 出版: |
2010
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| 主题: | |
| 在线阅读: | http://eprints.usm.my/42912/1/Cheah_Chun_Yee24.pdf |
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| 总结: | An investigation into excess reverse leakage current of p-n junction process
control structures in an industrial bipolar junction transistor technology is detailed in this
work. Excess leakage is shown to be caused by rod-like crystal defects generated from a
boron implantation process. The rod-like defects are suggested to consist of selfinterstitials
in the silicon lattice. The defects were reduced by optimizing the scattering
oxide growth prior to implantation. Phenomenological models are then proposed to
explain how self-interstitials were reduced by process optimization. Oxidation was
performed in dry ambient and above the viscous flow temperature to relieve the
interfacial stress during oxide growth. It is suggested that by doing so, interstitial
injection into silicon is eliminated. |
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