Modeling and simulation of single and double gates ion sensitive field effect transistor for biomedical applications
The modeling of Ion Sensitive Field Effect Transistor (ISFET) generally starts with its analogy to MOS devices and its threshold dependence on pH. Massobrio et al. proposed a macro-model plug in for SPICE. It was later modified to fit general SPICE based simulators without the need for a plug-in sof...
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| Format: | Thesis |
| Language: | English English |
| Published: |
2020
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| Online Access: | http://eprints.utem.edu.my/id/eprint/25424/1/Modeling%20And%20Simulation%20Of%20Single%20And%20Double%20Gates%20Ion%20Sensitive%20Field%20Effect%20Transistor%20For%20Biomedical%20Applications.pdf http://eprints.utem.edu.my/id/eprint/25424/2/Modeling%20And%20Simulation%20Of%20Single%20And%20Double%20Gates%20Ion%20Sensitive%20Field%20Effect%20Transistor%20For%20Biomedical%20Applications.pdf |
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http://eprints.utem.edu.my/id/eprint/25424/1/Modeling%20And%20Simulation%20Of%20Single%20And%20Double%20Gates%20Ion%20Sensitive%20Field%20Effect%20Transistor%20For%20Biomedical%20Applications.pdfhttp://eprints.utem.edu.my/id/eprint/25424/2/Modeling%20And%20Simulation%20Of%20Single%20And%20Double%20Gates%20Ion%20Sensitive%20Field%20Effect%20Transistor%20For%20Biomedical%20Applications.pdf