Band anti-crossing modelling and characterization of multi quantum well gainnas for photovoltaic application
A recent study of Ga0.952In0.048N0.016As0.984 /GaAs multi-quantum-well (MQW) p-i-n diode has reported that it is able to operate in near-infrared applications (800-1100nm). Nevertheless, there is no elucidations on the effect of indium (In) and nitrogen (N) fractions on electronic band transition, t...
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| Format: | Thesis |
| Language: | English English English |
| Published: |
2021
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| Online Access: | http://eprints.uthm.edu.my/1021/1/24p%20MUHAMMAD%20IZZUDDIN%20BIN%20ABD%20SAMAD.pdf http://eprints.uthm.edu.my/1021/2/MUHAMMAD%20IZZUDDIN%20BIN%20ABD%20SAMAD%20COPYRIGHT%20DECLARATION.pdf http://eprints.uthm.edu.my/1021/3/MUHAMMAD%20IZZUDDIN%20BIN%20ABD%20SAMAD%20WATERMARK.pdf |
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