Device simulation of the electrical characteristics in 14nm gaussian channel junctionless finfet

Device simulation of the electrical characteristics in 14nm gaussian channel junctionless finfet

In conventional FinFET, it becomes difficult to define the doping concentration of material over a distance shorter than 10nm and produce high-quality junctions for sub 20nm regime which leads to short channel effects. Hence, Junctionless FinFET which offers architecture, free from any p-n junction...

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书目详细资料
主要作者:	Ramakrishnan, Mathangi
格式:	Thesis
语言:	English
出版:	2022
主题:	TK Electrical engineering Electronics Nuclear engineering
在线阅读:	http://eprints.utm.my/id/eprint/102170/1/MathangiRamakrishnanMSKE2022.pdf.pdf
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