Modeling the effect of velocity saturation in nanoscale MOSFET

MOSFET scaling throughout the years has enabled us to pack million of MOS transistors on a single chip to keep in pace with Moore’s Law. The introduction of 65 nm and 90 nm process technology offer low power, high-density and highspeed generation of processor with latest technological advancement....

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Bibliographic Details
Main Author: Tan, Michael Loong Peng
Format: Thesis
Language:English
Published: 2006
Subjects:
Online Access:http://eprints.utm.my/id/eprint/4593/1/MichaelTanLoongPengMFKE2006.pdf
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