Simulation of single electron transistor (SET) circuits using Monte Carlo method

Simulation of single electron transistor (SET) circuits using Monte Carlo method

The very fast switching characteristics and very low power consumption have given the single electron transistor (SET) promising capabilities to replace CMOS transistors in some semiconductor applications. SET theory of operation is now well established nevertheless the transistor is still under lab...

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書目詳細資料
主要作者:	Ahmad, Syabani
格式:	Thesis
語言:	English
出版:	2007
主題:	TK Electrical engineering Electronics Nuclear engineering
在線閱讀:	http://eprints.utm.my/id/eprint/6425/1/SyabaniAhmadMFKE2007.pdf
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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