Modeling and simulation of strained graprene nanoribbon field effect transistor
Stretching technique used in material fundamental is not a new technology. It has been adopted in silicon industry to overcome the limitations arisen by scaling down the size of the conventional metal oxide semiconductor Field Effect Transistor (FET). This technique is known as strain technology. As...
Saved in:
| 主要作者: | |
|---|---|
| 格式: | Thesis |
| 語言: | English |
| 出版: |
2016
|
| 主題: | |
| 在線閱讀: | http://eprints.utm.my/id/eprint/77839/1/NurulAidaIzuaniMFKE2016.pdf |
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|