Defect studies in gallium arsenide phosphide and confirmation of negative-U property of sulphur related DX center /

相似書籍

• Copper-induced deep level defects in GaAs0.6P0.4 alloy semiconductor /
  由: Hu, Peh Yin
  出版: (1992)
• Pulse-duration dependent capacitance analysis and its application to copper in GaAs0.6P0.4 /
  由: Han, Meng Kwong
  出版: (1994)
• Tight-binding molecular dynamics studies of clusters and defects in GaAs and AlAs /
  由: Quek, Hoon Khim
  出版: (1998)
• Defect studies of MBE grown AlGaAs/GaAs and InGaAs/GaAs materials /
  由: Du, An Yan
  出版: (1998)
• Laser annealing of donor implanted gallium arsenide /
  由: Akintunde, J. A.
  出版: (1981)