Surface modification of Si, GaAs and and InP by 1-10 keV Ar+ and N2+ ion bombardment /
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| 主要作者: | |
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| 格式: | Thesis 圖書 |
| 語言: | English |
| 出版: |
1997.
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| 001 | u420856 | ||
| 003 | SIRSI | ||
| 008 | 980221s1997 si v 00 1 eng m | ||
| 035 | |a ACE-6393 | ||
| 040 | |a UMM | ||
| 090 | |a QC702.7 |b B65Pan | ||
| 100 | 1 | 0 | |a Pan, Ji Sheng. |
| 245 | 1 | 0 | |a Surface modification of Si, GaAs and and InP by 1-10 keV Ar+ and N2+ ion bombardment / |c Pan Ji Sheng. |
| 260 | |c 1997. | ||
| 300 | |a xi, 214 leaves : |b ill. ; |c 30 cm. | ||
| 502 | |a Thesis (Ph.D.) -- National University of Singapore, 1997. | ||
| 504 | |a Includes bibliographical references. | ||
| 650 | 0 | |a Ion bombardment. | |
| 650 | 0 | |a Surfaces (Technology) | |
| 650 | 0 | |a Ion implantation. | |
| 948 | |a 21/02/1998 |b 25/11/2000 | ||
| 596 | |a 1 | ||
| 999 | |a QC702.7 B65PAN |w LC |c 1 |i A507496348 |d 2/9/1998 |l STACKS |m P01UTAMA |n 1 |r Y |s Y |t TESIS |u 23/7/1998 | ||