Lim, C. W. (1998). Process integration issues of self-aligned titanium silicide technology (Ti-Salicide) in deep sub-micron CMOS devices fabrication.
Chicago Style (17th ed.) CitationLim, Chong Wee. Process Integration Issues of Self-aligned Titanium Silicide Technology (Ti-Salicide) in Deep Sub-micron CMOS Devices Fabrication. 1998.
MLA引文Lim, Chong Wee. Process Integration Issues of Self-aligned Titanium Silicide Technology (Ti-Salicide) in Deep Sub-micron CMOS Devices Fabrication. 1998.
警告:這些引文格式不一定是100%准確.