Hot-carrier degradation study in MOSFET's by charge pumping, gated-diode and floating gate techniques /

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Bibliographic Details
Main Author: Goh, Yong Han
Format: Thesis Book
Language:English
Published: 1997.
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035 |a ACE-3362 
040 |a UMM 
090 |a TK7871.99  |b M44Goh 
100 1 0 |a Goh, Yong Han. 
245 1 0 |a Hot-carrier degradation study in MOSFET's by charge pumping, gated-diode and floating gate techniques /  |c by Goh Yong Han. 
260 |c 1997. 
300 |a 1 v. (various pagings) :  |b ill. ;  |c 30 cm. 
502 |a Dissertation (M.Eng.) -- National University of Singapore, 1997. 
504 |a Includes bibliographical references. 
650 0 |a Metal oxide semiconductor field-effect transistors. 
650 0 |a Hot carriers. 
948 |a 23/12/1997  |b 17/08/1998 
596 |a 1 
999 |a TK7871.99 M44GOH  |w LC  |c 1  |i A507475610  |d 26/1/2001  |l STACKS  |m P01UTAMA  |n 2  |r Y  |s Y  |t TESIS  |u 4/4/1998