Hot-carrier degradation study in MOSFET's by charge pumping, gated-diode and floating gate techniques /
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Format: | Thesis Book |
Language: | English |
Published: |
1997.
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LEADER | 00840cam a2200229 a 4500 | ||
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001 | u419133 | ||
003 | SIRSI | ||
008 | 971223s1997 si v 00 1 eng m | ||
035 | |a ACE-3362 | ||
040 | |a UMM | ||
090 | |a TK7871.99 |b M44Goh | ||
100 | 1 | 0 | |a Goh, Yong Han. |
245 | 1 | 0 | |a Hot-carrier degradation study in MOSFET's by charge pumping, gated-diode and floating gate techniques / |c by Goh Yong Han. |
260 | |c 1997. | ||
300 | |a 1 v. (various pagings) : |b ill. ; |c 30 cm. | ||
502 | |a Dissertation (M.Eng.) -- National University of Singapore, 1997. | ||
504 | |a Includes bibliographical references. | ||
650 | 0 | |a Metal oxide semiconductor field-effect transistors. | |
650 | 0 | |a Hot carriers. | |
948 | |a 23/12/1997 |b 17/08/1998 | ||
596 | |a 1 | ||
999 | |a TK7871.99 M44GOH |w LC |c 1 |i A507475610 |d 26/1/2001 |l STACKS |m P01UTAMA |n 2 |r Y |s Y |t TESIS |u 4/4/1998 |