Process integration issues of self-aligned titanium silicide technology (Ti-Salicide) in deep sub-micron CMOS devices fabrication /
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Format: | Thesis Book |
Language: | English |
Published: |
1998.
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LEADER | 00949cam a2200253 a 4500 | ||
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001 | u437512 | ||
003 | SIRSI | ||
008 | 990402s1998 si v 00 1 eng m | ||
035 | |a ACG-9086 | ||
040 | |a UMM | ||
090 | |a TK7871.15 |b S54Lim | ||
100 | 1 | 0 | |a Lim, Chong Wee. |
245 | 1 | 0 | |a Process integration issues of self-aligned titanium silicide technology (Ti-Salicide) in deep sub-micron CMOS devices fabrication / |c by Lim Chong Wee. |
260 | |c 1998. | ||
300 | |a xiii, 100 leaves : |b ill. ; |c 30 cm. | ||
502 | |a Dissertation (M.Sc.) -- National University of Singapore, 1998. | ||
504 | |a Includes bibliographical references. | ||
650 | 0 | |a Silicides. | |
650 | 0 | |a Integrated circuits |x Ultra large scale integration |x Materials. | |
650 | 0 | |a Metal oxide semiconductors, Complementary |x Design | |
650 | 0 | |a Titanium. | |
948 | |a 02/04/1999 |b 22/05/1999 | ||
596 | |a 1 | ||
999 | |a TK7871.15 S54LIM |w LC |c 1 |i A508384243 |l STACKS |m P01UTAMA |r Y |s Y |t TESIS |u 3/6/1999 |